IRF530NSPBF
Manufacturer: Rochester Electronics
Description: HEXFET POWER MOSFET
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: HEXFET®
In Stock:500000
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Product Introduction:
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Product Details
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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AS9120B
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ISO14001
ISO9001
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