IPD50N04S308ATMA1
Manufacturer: Rochester Electronics
Description: OPTLMOS N-CHANNEL POWER MOSFET
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
In Stock:298900
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Product Details
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.35 pF @ 25 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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