IRF7464PBF
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 200V 1.2A 8SO
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: HEXFET®
In Stock:5000
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Product Introduction:
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Product Details
SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
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AS9120B
ESD S20.20
ISO14001
ISO9001
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