SIR812DP-T1-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
In Stock:10000
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Product Introduction:
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Product Details
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs335 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10240 pF @ 15 V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
Related Parts for SIR812DP-T1-GE3
AS9120B
ESD S20.20
ISO14001
ISO9001
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