FQPF8N80CYDTU
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: *
In Stock:38625
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Product Introduction:
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Product Details
Series*
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.55Ohm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2.05 pF @ 25 V
FET Feature-
Power Dissipation (Max)59W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads
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