IMW120R030M1HXKSA1
Manufacturer: IR (Infineon Technologies)
Description: SICFET N-CH 1.2KV 56A TO247-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: CoolSiC™
In Stock:1470
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Product Details
SeriesCoolSiC™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds2.12 nF @ 800 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3
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