IPD80R1K4CEATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 800V 3.9A TO252-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
In Stock:35553
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Product Introduction:
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Product Details
SeriesCoolMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts for IPD80R1K4CEATMA1
AS9120B
ESD S20.20
ISO14001
ISO9001
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