FQPF19N10
Manufacturer: Rochester Electronics
Description: MOSFET N-CH 100V 13.6A TO220F
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: QFET®
In Stock:50000
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Product Introduction:
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Product Details
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 25 V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
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