TK8A65D(STA4,Q,M)
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Description: MOSFET N-CH 650V 8A TO220SIS
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: π-MOSVII
In Stock:49966
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Product Introduction:
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Product Details
Seriesπ-MOSVII
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs840mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
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