IPD12CN10NGATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 100V 67A TO252-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
In Stock:1050
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Product Introduction:
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Product Details
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320 pF @ 50 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts for IPD12CN10NGATMA1
AS9120B
ESD S20.20
ISO14001
ISO9001
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